Vishay
VEMT4700F-GS08
Sensors
VEMT4700F-GS08
54-VEMT4700F-GS08
Phototransistor Chip Silicon 940nm 3-Pin PLCC T/R
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Tech Specifications
Number of Channels per Chip
1
Fabrication Technology
NPN Transistor
Maximum On-State Collector Current
50 mA
PCB changed
3
HTS
8541.49.70.80
Maximum Collector-Emitter Voltage (V)
70
ECCN (US)
EAR99
PPAP
No
Maximum Power Dissipation (mW)
100
RoHS
RoHS Compliant
Automotive
No
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
100
Supplier Package
PLCC
Phototransistor Type
Phototransistor
Maximum Collector-Emitter Saturation Voltage (V)
0.3
Polarity
NPN
Lens Shape Type
Flat
EU RoHS
Compliant
Maximum Dark Current (nA)
200
Maximum Rise Time (ns)
6000(Typ)
Maximum Collector Current (mA)
50
Maximum Fall Time (ns)
2000(Typ)
ECCN
EAR99
Material
Silicon
Package Length
2.8
Standard Package Name
LCC
Maximum Emitter-Collector Voltage (V)
5
Pin Count
3
Cut-Off Filter
Visible Cut-off
Mounting
Surface Mount
Type
Chip
Moisture Sensitive
Yes
Viewing Orientation
Top View
Half Intensity Angle Degrees (°)
120
Lead Shape
J-Lead
Part Status
Active
Peak Wavelength (nm)
940
Package
Tape and Reel
Package Width
3
USHTS
8541497080
Maximum Light Current (uA)
500(Typ)
VEMT4700F-GS08 Documents
Download datasheets and manufacturer documentation for VEMT4700F-GS08
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