Vishay
VEMT3700-GS08
Sensors
VEMT3700-GS08
54-VEMT3700-GS08
Phototransistor IR Chip Silicon 850nm 2-Pin PLCC T/R
In Stock : 919
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Tech Specifications
Number of Channels per Chip
1
Unit Weight
0.027073 oz
Fabrication Technology
NPN Transistor
Light Current
500 uA
PPAP
No
Fall Time
6 us
RoHS
RoHS Compliant
Automotive
No
Supplier Package
PLCC
Package / Case
PLCC-2
Maximum Collector-Emitter Saturation Voltage (V)
0.3
Lens Shape Type
Flat
EU RoHS
Compliant
Peak Wavelength
850 nm
Maximum Collector Current (mA)
50
Maximum Fall Time (ns)
6000(Typ)
ECCN
EAR99
Standard Package Name
LCC
Maximum Emitter-Collector Voltage (V)
5
Pin Count
2
Mounting
Surface Mount
Rise Time
6 us
Moisture Sensitive
Yes
Viewing Orientation
Top View
Lead Shape
J-Lead
Peak Wavelength (nm)
850
Collector- Emitter Voltage VCEO Max
70 V
Package
Tape and Reel
USHTS
8541498000
Maximum Light Current (uA)
500
Maximum On-State Collector Current
50 mA
PCB changed
2
HTS
8541.49.70.80
Maximum Collector-Emitter Voltage (V)
70
ECCN (US)
EAR99
Maximum Power Dissipation (mW)
100
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
100
Phototransistor Type
Phototransistor
Polarity
NPN
Height
1.65 mm
Maximum Operating Temperature
+ 100 C
Maximum Dark Current (nA)
200
Width
2.8 mm
Mounting Style
SMD/SMT
Maximum Rise Time (ns)
6000(Typ)
Material
Silicon
Package Length
3
Minimum Operating Temperature
- 40 C
Cut-Off Filter
Visible Cut-off
Series
VEMT
Type
IR Chip
Half Intensity Angle Degrees (°)
120
Length
3 mm
Half Intensity Angle Degrees
60 deg
Part Status
Active
Package Width
2.8
Pd - Power Dissipation
100 mW
Dark Current
200 nA
VEMT3700-GS08 Documents
Download datasheets and manufacturer documentation for VEMT3700-GS08
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Shopping Guide
Payment Methods
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Shipping Rate
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Delivery Methods
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