Toshiba Electronic Devices and Storage Corporation
TPS601A-B(F)
Sensors
TPS601A-B(F)
54-TPS601A-B(F)
Phototransistor Chip Silicon 800nm 2-Pin TO-18
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Tech Specifications
Number of Channels per Chip
1
Fabrication Technology
NPN Transistor
PCB changed
2
Maximum Collector-Emitter Voltage (V)
40
ECCN (US)
EAR99
PPAP
No
Maximum Power Dissipation (mW)
150
Automotive
No
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
125
Supplier Package
TO-18
Phototransistor Type
Phototransistor
Package Height
6.5
Maximum Collector-Emitter Saturation Voltage (V)
0.4
Polarity
NPN
Lens Shape Type
Domed
EU RoHS
Compliant
Maximum Dark Current (nA)
200
Diameter
5.8(Max)
Maximum Rise Time (ns)
2000(Typ)
Maximum Collector Current (mA)
50
Maximum Fall Time (ns)
2000(Typ)
Material
Silicon
Standard Package Name
TO
Maximum Emitter-Collector Voltage (V)
5
Pin Count
2
Mounting
Through Hole
Type
Chip
Viewing Orientation
Top View
Half Intensity Angle Degrees (°)
20
Lead Shape
Through Hole
Part Status
Obsolete
Peak Wavelength (nm)
800
Maximum Light Current (uA)
600
TPS601A-B(F) Documents
Download datasheets and manufacturer documentation for TPS601A-B(F)
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