Vishay
TEST2600
Sensors
TEST2600
54-TEST2600
Phototransistor IR Chip Silicon 920nm 2-Pin Side View Micro
In Stock : 1302
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Tech Specifications
Number of Channels per Chip
1
Unit Weight
0.005607 oz
Fabrication Technology
NPN Transistor
Light Current
2.5 mA
Product
Phototransistors
PPAP
No
RoHS
RoHS Compliant
Automotive
No
Supplier Package
Side View Micro
Package / Case
Side View Micro
Maximum Collector-Emitter Saturation Voltage (V)
0.3
Lens Shape Type
Domed
EU RoHS
Compliant
Peak Wavelength
920 nm
Collector-Emitter Breakdown Voltage
70 V
Maximum Collector Current (mA)
50
ECCN
EAR99
Standard Package Name
Side View
Wavelength
920 nm
Maximum Emitter-Collector Voltage (V)
5
Pin Count
2
Mounting
Through Hole
Lens Color/Style
Black
Viewing Orientation
Side View
Peak Wavelength (nm)
920
Collector- Emitter Voltage VCEO Max
70 V
Package
Bulk
USHTS
8541410000
Maximum Light Current (uA)
2500(Typ)
Maximum On-State Collector Current
50 mA
PCB changed
2
HTS
8541.49.70.80
Maximum Collector-Emitter Voltage (V)
70
ECCN (US)
EAR99
Maximum Power Dissipation (mW)
100
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
85
Phototransistor Type
Phototransistor
Package Height
3.1
Collector-Emitter Saturation Voltage
300 mV
Polarity
NPN
Height
3.1 mm
Maximum Operating Temperature
+ 85 C
Maximum Dark Current (nA)
100
Width
2.2 mm
Mounting Style
Through Hole
Material
Silicon
Package Length
3.6
Minimum Operating Temperature
- 40 C
Cut-Off Filter
Visible Cut-off
Type
IR Chip
Half Intensity Angle Degrees (°)
60
Length
3.6 mm
Half Intensity Angle Degrees
30 deg
Part Status
Active
Package Width
2.2
Pd - Power Dissipation
100 mW
Dark Current
100 nA
TEST2600 Documents
Download datasheets and manufacturer documentation for TEST2600
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Shopping Guide
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Shipping Rate
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Delivery Methods
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