Vishay
TEFT4300
Sensors
TEFT4300
54-TEFT4300
Phototransistor IR Chip Silicon 925nm 2-Pin T-1
In Stock : 27402
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Tech Specifications
Number of Channels per Chip
1
Unit Weight
0.005572 oz
Fabrication Technology
NPN Transistor
Light Current
3.2 mA
Product
Phototransistors
PPAP
No
RoHS
RoHS Compliant
Automotive
No
Supplier Package
T-1
Package / Case
T-1
Maximum Collector-Emitter Saturation Voltage (V)
0.3
Lens Shape Type
Domed
EU RoHS
Compliant
Peak Wavelength
925 nm
Collector-Emitter Breakdown Voltage
70 V
Maximum Collector Current (mA)
50
ECCN
EAR99
Wavelength
925 nm
Maximum Emitter-Collector Voltage (V)
5
Pin Count
2
Mounting
Through Hole
Lens Color/Style
Black
Viewing Orientation
Top View
Peak Wavelength (nm)
925
Collector- Emitter Voltage VCEO Max
70 V
Package
Bulk
USHTS
8541497080
Maximum Light Current (uA)
3200(Typ)
Maximum On-State Collector Current
50 mA
PCB changed
2
HTS
8541.49.70.80
Maximum Collector-Emitter Voltage (V)
70
ECCN (US)
EAR99
Maximum Power Dissipation (mW)
100
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
100
Phototransistor Type
Phototransistor
Package Height
4.5
Collector-Emitter Saturation Voltage
300 mV
Polarity
NPN
Height
4.5 mm
Maximum Operating Temperature
+ 100 C
Maximum Dark Current (nA)
200
Width
3.9 mm
Mounting Style
Through Hole
Material
Silicon
Package Length
3.9
Minimum Operating Temperature
- 40 C
Cut-Off Filter
Visible Cut-off
Type
IR Chip
Half Intensity Angle Degrees (°)
60
Length
3.2 mm
Half Intensity Angle Degrees
30 deg
Part Status
Active
Package Width
3.2
Pd - Power Dissipation
100 mW
Dark Current
200 nA
TEFT4300 Documents
Download datasheets and manufacturer documentation for TEFT4300
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Shopping Guide
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Shipping Rate
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Delivery Methods
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