ams OSRAM
SFH313FA-3/4
Sensors
SFH313FA-3/4
54-SFH313FA-3/4
No Phototransistor IR Chip Silicon 850nm 2-Pin T-1 3/4
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Tech Specifications
Number of Channels per Chip
1
Fabrication Technology
NPN Transistor
PCB changed
2
HTS
8541.49.80.00
Maximum Collector-Emitter Voltage (V)
70
ECCN (US)
EAR99
PPAP
No
Maximum Power Dissipation (mW)
200
Automotive
No
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
100
Supplier Package
T-1 3/4
Phototransistor Type
Phototransistor
Package Height
9(Max)
Maximum Collector-Emitter Saturation Voltage (V)
0.15
Polarity
NPN
Lens Shape Type
Domed
EU RoHS
Compliant
Maximum Dark Current (nA)
200
Diameter
5.9(Max)
Maximum Rise Time (ns)
18000
Maximum Collector Current (mA)
50
Maximum Fall Time (ns)
20000
Material
Silicon
Maximum Emitter-Collector Voltage (V)
7
Pin Count
2
Cut-Off Filter
Visible Cut-off
Mounting
Through Hole
Type
IR Chip
Viewing Orientation
Top View
Half Intensity Angle Degrees (°)
20
Lead Shape
Through Hole
Part Status
Active
Peak Wavelength (nm)
850
Maximum Light Current (uA)
12500
SFH313FA-3/4 Documents
Download datasheets and manufacturer documentation for SFH313FA-3/4
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