ams OSRAM
SFH 313 FA
Sensors
SFH 313 FA
54-SFH 313 FA
No Phototransistor IR Chip Silicon 850nm 2-Pin T-1 3/4
In Stock : 20463
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Tech Specifications
Number of Channels per Chip
1
Unit Weight
0.014110 oz
Fabrication Technology
NPN Transistor
Light Current
2.5 mA
Product
Phototransistors
PPAP
No
Fall Time
-
RoHS
RoHS Compliant
Automotive
No
Propagation Delay - Max
-
Supplier Package
T-1 3/4
Package / Case
T-1 3/4
Lens Shape Type
Domed
EU RoHS
Compliant
Peak Wavelength
870 nm
Collector-Emitter Breakdown Voltage
70 V
Maximum Collector Current (mA)
50
Output Current
-
Maximum Fall Time (ns)
20000
ECCN
EAR99
Wavelength
870 nm
Maximum Emitter-Collector Voltage (V)
7
Pin Count
2
Mounting
Through Hole
Lens Color/Style
Black
Qualification
AEC-Q100
Rise Time
-
Viewing Orientation
Top View
Lead Shape
Through Hole
Peak Wavelength (nm)
850
Collector- Emitter Voltage VCEO Max
70 V
Package
Bulk
USHTS
8541491050
Maximum On-State Collector Current
50 mA
PCB changed
2
HTS
8541.49.70.80
Maximum Collector-Emitter Voltage (V)
70
ECCN (US)
EAR99
Maximum Power Dissipation (mW)
200
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
100
Phototransistor Type
Phototransistor
Package Height
9(Max)
Collector-Emitter Saturation Voltage
150 mV
Polarity
NPN
Height
9 mm
Maximum Operating Temperature
+ 100 C
Maximum Dark Current (nA)
200
Width
5.9 mm
Diameter
5.9(Max)
Mounting Style
Through Hole
Maximum Rise Time (ns)
18000
Material
Silicon
Minimum Operating Temperature
- 40 C
Cut-Off Filter
Visible Cut-off
Series
SFH 313 FA
Type
IR Chip
Half Intensity Angle Degrees (°)
20
Length
5.9 mm
Half Intensity Angle Degrees
10 deg
Part Status
Active
Pd - Power Dissipation
200 mW
Dark Current
200 nA
SFH 313 FA Documents
Download datasheets and manufacturer documentation for SFH 313 FA
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Delivery Methods
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