onsemi
QSB363YR
Sensors
QSB363YR
54-QSB363YR
SENSOR PHOTO 940NM TOP VIEW 2SMD
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Tech Specifications
Number of Channels per Chip
1
Fabrication Technology
NPN Transistor
PPAP
No
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
30 V
Automotive
No
Supplier Package
T-3/4
Package / Case
2-SMD, Yoke Bend
REACH Status
REACH Unaffected
Maximum Collector-Emitter Saturation Voltage (V)
0.4
Lens Shape Type
Domed
EU RoHS
Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Operating Temperature
-40°C ~ 85°C (TA)
Maximum Collector Current (mA)
2
Maximum Fall Time (ns)
15000(Typ)
ECCN
EAR99
Orientation
Top View
Mounting Type
Surface Mount
Wavelength
940nm
Maximum Emitter-Collector Voltage (V)
5
Pin Count
2
Mounting
Surface Mount
Viewing Orientation
Top View
Peak Wavelength (nm)
940
HTSUS
8541.49.7080
Package
Tape & Reel (TR)
Lens Color
Black Transparent
Maximum Light Current (uA)
1500(Typ)
PCB changed
2
HTS
8541407080
Viewing Angle
24°
Maximum Collector-Emitter Voltage (V)
30
ECCN (US)
EAR99
Maximum Power Dissipation (mW)
75
Current - Dark (Id) (Max)
100 nA
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
85
Phototransistor Type
Phototransistor
Package Height
3(Max)
Mfr
onsemi
Polarity
NPN
Maximum Dark Current (nA)
100
RoHS Status
ROHS3 Compliant
Maximum Rise Time (ns)
15000(Typ)
Material
Silicon
Package Length
2.7(Max)
Cut-Off Filter
Visible Cut-off
Series
-
Type
IR Chip
Half Intensity Angle Degrees (°)
24
Power - Max
75 mW
Part Status
Active
Package Width
2.2(Max)
Base Product Number
QSB363
QSB363YR Documents
Download datasheets and manufacturer documentation for QSB363YR
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Shopping Guide
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Delivery Methods
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