onsemi
QSB363
Sensors
QSB363
54-QSB363
Phototransistor IR Chip Silicon 940nm 2-Pin T-3/4 Bag
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Tech Specifications
Number of Channels per Chip
1
Fabrication Technology
NPN Transistor
PCB changed
2
HTS
8541.49.80.00
Maximum Collector-Emitter Voltage (V)
30
ECCN (US)
EAR99
PPAP
No
Maximum Power Dissipation (mW)
75
Automotive
No
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
85
Supplier Package
T-3/4
Phototransistor Type
Phototransistor
Package Height
3(Max)
Maximum Collector-Emitter Saturation Voltage (V)
0.4
Polarity
NPN
Lens Shape Type
Domed
EU RoHS
Compliant
Maximum Dark Current (nA)
100
Maximum Rise Time (ns)
15000(Typ)
Maximum Collector Current (mA)
2
Maximum Fall Time (ns)
15000(Typ)
Material
Silicon
Package Length
2.7(Max)
Maximum Emitter-Collector Voltage (V)
5
Pin Count
2
Cut-Off Filter
Visible Cut-off
Mounting
Surface Mount
Type
IR Chip
Viewing Orientation
Top View
Half Intensity Angle Degrees (°)
24
Part Status
Active
Peak Wavelength (nm)
940
Package
Bag
Lens Color
Black Transparent
Package Width
2.2(Max)
Maximum Light Current (uA)
1500(Typ)
QSB363 Documents
Download datasheets and manufacturer documentation for QSB363
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