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Everlight Electronics_PT928-6C-6-2
Everlight Electronics_PT928-6C-6-2
Everlight Electronics

PT928-6C-6-2

Sensors
Everlight Electronics
PT928-6C-6-2
54-PT928-6C-6-2
Everlight Electronics-PT928-6C-6-2-datasheet-790265.pdf
Everlight Electronics-PT928-6C-6-2-datasheets-790265.pdf
No Phototransistor IR Chip Silicon 940nm
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Description Tech Specifications Documents Shopping Guide

Tech Specifications

Number of Channels per Chip
1
Fabrication Technology
NPN Transistor
HTS
8541.49.70.40
Maximum Collector-Emitter Voltage (V)
30
ECCN (US)
EAR99
Maximum Power Dissipation (mW)
75
Minimum Operating Temperature (°C)
-25
Maximum Operating Temperature (°C)
85
Phototransistor Type
Phototransistor
Maximum Collector-Emitter Saturation Voltage (V)
0.4
Polarity
NPN
Lens Shape Type
Domed
EU RoHS
Compliant
Maximum Dark Current (nA)
100
Maximum Rise Time (ns)
15000(Typ)
Maximum Collector Current (mA)
20
Maximum Fall Time (ns)
15000(Typ)
Material
Silicon
Maximum Emitter-Collector Voltage (V)
5
Type
IR Chip
Viewing Orientation
Side View
Part Status
Active
Peak Wavelength (nm)
940
Lens Color
Water Clear
Maximum Light Current (uA)
3410

PT928-6C-6-2 Documents

Download datasheets and manufacturer documentation for PT928-6C-6-2

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Shopping Guide

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