Everlight Electronics
PT5529B/L2-F
Sensors
PT5529B/L2-F
54-PT5529B/L2-F
SENSOR PHOTO 940NM SIDE VIEW RAD
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Tech Specifications
Number of Channels per Chip
2
Fabrication Technology
NPN Transistor
Product
Phototransistors
PPAP
No
Fall Time
15 us
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
30 V
RoHS
RoHS Compliant
Automotive
No
Package / Case
Radial - 3 Leads
Maximum Collector-Emitter Saturation Voltage (V)
0.4
Lens Shape Type
Flat
EU RoHS
Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Operating Temperature
-40°C ~ 85°C (TA)
Collector-Emitter Breakdown Voltage
30 V
Current - Collector (Ic) (Max)
20 mA
Maximum Collector Current (mA)
20
Maximum Fall Time (ns)
15000(Typ)
ECCN
EAR99
Orientation
Side View
Mounting Type
Through Hole
Wavelength
940nm
Maximum Emitter-Collector Voltage (V)
5
Pin Count
3
Mounting
Through Hole
Rise Time
15 us
Viewing Orientation
Side View
Peak Wavelength (nm)
940
Collector- Emitter Voltage VCEO Max
30 V
HTSUS
8541.49.7080
Package
Bulk
Lens Color
Black
USHTS
8541410000
Maximum Light Current (uA)
1085
Maximum On-State Collector Current
20 mA
PCB changed
3
HTS
8541.49.95.00
Viewing Angle
-
Maximum Collector-Emitter Voltage (V)
30
ECCN (US)
EAR99
Maximum Power Dissipation (mW)
75
Current - Dark (Id) (Max)
100 nA
Minimum Operating Temperature (°C)
-25
Maximum Operating Temperature (°C)
85
Phototransistor Type
Phototransistor
Package Height
4.5
Collector-Emitter Saturation Voltage
400 mV
Mfr
Everlight Electronics Co Ltd
Polarity
NPN
Height
4.5 mm
Maximum Operating Temperature
+ 85 C
Maximum Dark Current (nA)
100
Width
2.5 mm
RoHS Status
ROHS3 Compliant
Mounting Style
Through Hole
Maximum Rise Time (ns)
15000(Typ)
Material
Silicon
Package Length
4.8
Minimum Operating Temperature
- 25 C
Series
-
Type
IR Chip
Length
4.8 mm
Part Status
Active
Package Width
2.8
Pd - Power Dissipation
75 mW
Dark Current
100 nA
Base Product Number
PT5529
PT5529B/L2-F Documents
Download datasheets and manufacturer documentation for PT5529B/L2-F
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Delivery Methods
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