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Tech Specifications
Number of Channels per Chip
1
Fabrication Technology
NPN Transistor
PCB changed
2
Viewing Angle
70°
Maximum Collector-Emitter Voltage (V)
35
ECCN (US)
EAR99
PPAP
No
Maximum Power Dissipation (mW)
75
Current - Dark (Id) (Max)
100 nA
Product Status
Obsolete
Voltage - Collector Emitter Breakdown (Max)
35 V
Automotive
No
Minimum Operating Temperature (°C)
-25
Maximum Operating Temperature (°C)
85
Package / Case
Radial
Phototransistor Type
Phototransistor
Package Height
4
Mfr
Sharp Microelectronics
Maximum Collector-Emitter Saturation Voltage (V)
0.4
Polarity
NPN
Lens Shape Type
Domed
EU RoHS
Compliant
Maximum Dark Current (nA)
100
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Operating Temperature
-25°C ~ 85°C (TA)
Maximum Rise Time (ns)
3000(Typ)
Current - Collector (Ic) (Max)
20 mA
Maximum Collector Current (mA)
20
Maximum Fall Time (ns)
3500(Typ)
ECCN
EAR99
Material
Silicon
Package Length
3
Orientation
Side View
Mounting Type
Through Hole
Wavelength
800nm
Maximum Emitter-Collector Voltage (V)
6
Pin Count
2
Mounting
Through Hole
Series
-
Type
IR Chip
Viewing Orientation
Side View
Power - Max
75 mW
Part Status
Obsolete
Peak Wavelength (nm)
800
HTSUS
8541.49.7080
Package
Tube
Lens Color
Transparent
Package Width
2.95
PT480E00000F Documents
Download datasheets and manufacturer documentation for PT480E00000F
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