Everlight Electronics
PT26-21B/TR8
Sensors
PT26-21B/TR8
54-PT26-21B/TR8
SENSOR PHOTO 940NM TOP VIEW 1206
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Tech Specifications
Number of Channels per Chip
1
Fabrication Technology
NPN Transistor
Product
Phototransistors
PPAP
No
Fall Time
15 us
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
30 V
RoHS
RoHS Compliant
Automotive
No
Supplier Package
SMD
Package / Case
1206 (3216 Metric)
Maximum Collector-Emitter Saturation Voltage (V)
0.4
Lens Shape Type
Domed
EU RoHS
Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Operating Temperature
-25°C ~ 85°C (TA)
Collector-Emitter Breakdown Voltage
60 V
Current - Collector (Ic) (Max)
20 mA
Maximum Collector Current (mA)
20
Maximum Fall Time (ns)
20000(Typ)
ECCN
EAR99
Orientation
Top View
Mounting Type
Surface Mount
Standard Package Name
SMD
Wavelength
940nm
Maximum Emitter-Collector Voltage (V)
5
Pin Count
2
Mounting
Surface Mount
Rise Time
15 us
Moisture Sensitive
Yes
Viewing Orientation
Top View
Peak Wavelength (nm)
880
Collector- Emitter Voltage VCEO Max
30 V
HTSUS
8541.49.7080
Package
Tape & Reel (TR)
Lens Color
Black
USHTS
8541497080
Maximum Light Current (uA)
1000(Typ)
Maximum On-State Collector Current
1 mA
PCB changed
2
HTS
8541.49.70.80
Viewing Angle
-
Maximum Collector-Emitter Voltage (V)
30
ECCN (US)
EAR99
Maximum Power Dissipation (mW)
75
Current - Dark (Id) (Max)
50 nA
Minimum Operating Temperature (°C)
-25
Maximum Operating Temperature (°C)
85
Phototransistor Type
Phototransistor
Collector-Emitter Saturation Voltage
400 mV
Mfr
Everlight Electronics Co Ltd
Polarity
NPN
Maximum Operating Temperature
+ 85 C
Maximum Dark Current (nA)
50
RoHS Status
ROHS3 Compliant
Maximum Rise Time (ns)
20000(Typ)
Material
Silicon
Package Length
3.2
Minimum Operating Temperature
- 25 C
Series
-
Type
IR Chip
Power - Max
75 mW
Part Status
Active
Package Width
1.6
Pd - Power Dissipation
75 mW
Dark Current
50 nA
Base Product Number
PT26-21
PT26-21B/TR8 Documents
Download datasheets and manufacturer documentation for PT26-21B/TR8
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