Everlight Electronics
PT1302B/C2
Sensors
PT1302B/C2
54-PT1302B/C2
LINEAR IC
In Stock : 889
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Tech Specifications
Number of Channels per Chip
1
Unit Weight
0.009647 oz
Fabrication Technology
NPN Transistor
PPAP
No
Fall Time
15 us
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
30 V
RoHS
RoHS Compliant
Automotive
No
Supplier Package
T-1 3/4
Package / Case
Radial
Maximum Collector-Emitter Saturation Voltage (V)
0.4
Lens Shape Type
Domed
EU RoHS
Compliant
Peak Wavelength
980 nm
Operating Temperature
-25°C ~ 85°C
Current - Collector (Ic) (Max)
20 mA
Maximum Collector Current (mA)
20
Maximum Fall Time (ns)
15000(Typ)
ECCN
EAR99
Orientation
Top View
Mounting Type
Through Hole
Wavelength
980nm
Maximum Emitter-Collector Voltage (V)
5
Pin Count
2
Mounting
Through Hole
Lens Color/Style
Black
Rise Time
15 us
Viewing Orientation
Top View
Lead Shape
Through Hole
Peak Wavelength (nm)
980
Collector- Emitter Voltage VCEO Max
30 V
HTSUS
8541.41.0000
Package
Bulk
Lens Color
Black
USHTS
8541497080
Maximum Light Current (uA)
1000(Typ)
Maximum On-State Collector Current
20 mA
PCB changed
2
HTS
8541.49.95.00
Viewing Angle
-
Maximum Collector-Emitter Voltage (V)
30
ECCN (US)
EAR99
Maximum Power Dissipation (mW)
75
Current - Dark (Id) (Max)
100 nA
Minimum Operating Temperature (°C)
-25
Maximum Operating Temperature (°C)
85
Phototransistor Type
Phototransistor
Package Height
8.5
Mfr
Everlight Electronics Co Ltd
Polarity
NPN
Height
8.5 mm
Maximum Operating Temperature
+ 85 C
Maximum Dark Current (nA)
100
Width
4.6 mm
Maximum Rise Time (ns)
15000(Typ)
Material
Silicon
Package Length
4.6
Minimum Operating Temperature
- 25 C
Series
-
Type
Chip
Length
4.6 mm
Power - Max
75 mW
Part Status
Unconfirmed
Package Width
4.6
Pd - Power Dissipation
75 mW
Dark Current
100 nA
PT1302B/C2 Documents
Download datasheets and manufacturer documentation for PT1302B/C2
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