Everlight Electronics
PT12-21C-TR8
Sensors
PT12-21C-TR8
54-PT12-21C-TR8
Phototransistor IR Chip Silicon 940nm 2-Pin SMD T/R
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Tech Specifications
Number of Channels per Chip
1
Fabrication Technology
NPN Transistor
PCB changed
2
HTS
COMPONENTS
Maximum Collector-Emitter Voltage (V)
30
ECCN (US)
EAR99
PPAP
No
Maximum Power Dissipation (mW)
75
Automotive
No
Minimum Operating Temperature (°C)
-25
Maximum Operating Temperature (°C)
85
Supplier Package
SMD
Phototransistor Type
Phototransistor
Package Height
2
Maximum Collector-Emitter Saturation Voltage (V)
0.4
Polarity
NPN
Lens Shape Type
Domed
EU RoHS
Compliant
Maximum Dark Current (nA)
100
Maximum Rise Time (ns)
15000(Typ)
Maximum Collector Current (mA)
50
Maximum Fall Time (ns)
15000(Typ)
Material
Silicon
Package Length
3
Standard Package Name
SMD
Maximum Emitter-Collector Voltage (V)
5
Pin Count
2
Cut-Off Filter
Visible Cut-off
Mounting
Surface Mount
Type
IR Chip
Viewing Orientation
Side View
Lead Shape
No Lead
Part Status
Active
Peak Wavelength (nm)
940
Package
Tape and Reel
Lens Color
Water Clear
Package Width
1
Maximum Light Current (uA)
1140(Typ)
PT12-21C-TR8 Documents
Download datasheets and manufacturer documentation for PT12-21C-TR8
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