Sharp
PT100MF0MP
Sensors
PT100MF0MP
54-PT100MF0MP
Phototransistor IR Chip 910nm 2-Pin SMD
In Stock : 6203
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Tech Specifications
Number of Channels per Chip
1
Unit Weight
0.002145 oz
Fabrication Technology
NPN Transistor
PPAP
No
Fall Time
6 us
RoHS
RoHS Compliant
Automotive
No
Supplier Package
SMD
Package / Case
SMD
Maximum Collector-Emitter Saturation Voltage (V)
0.4
Lens Shape Type
Domed
EU RoHS
Compliant
Peak Wavelength
910 nm
Maximum Collector Current (mA)
20
Maximum Fall Time (ns)
6000(Typ)
ECCN
EAR99
Standard Package Name
SMD
Maximum Emitter-Collector Voltage (V)
6
Pin Count
2
Mounting
Surface Mount
Rise Time
5 us
Viewing Orientation
Side View
Peak Wavelength (nm)
910
Collector- Emitter Voltage VCEO Max
35 V
Package
Reel
USHTS
8541497080
Maximum Light Current (uA)
3450
Maximum On-State Collector Current
20 mA
PCB changed
2
Maximum Collector-Emitter Voltage (V)
35
ECCN (US)
EAR99
Maximum Power Dissipation (mW)
75
Minimum Operating Temperature (°C)
-30
Maximum Operating Temperature (°C)
85
Phototransistor Type
Phototransistor
Package Height
2.2
Polarity
NPN
Height
2.2 mm
Maximum Operating Temperature
+ 85 C
Maximum Dark Current (nA)
100
Width
1.5 mm
Maximum Rise Time (ns)
5000(Typ)
Package Length
3
Minimum Operating Temperature
- 30 C
Cut-Off Filter
Visible Cut-off
Type
IR Chip
Half Intensity Angle Degrees (°)
30
Length
3 mm
Half Intensity Angle Degrees
15 deg
Part Status
Obsolete
Package Width
1.5
Pd - Power Dissipation
75 mW
Dark Current
100 nA
PT100MF0MP Documents
Download datasheets and manufacturer documentation for PT100MF0MP
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Delivery Methods
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