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Nisshinbo Micro Devices_NJL6401R-3-TE1
Nisshinbo Micro Devices_NJL6401R-3-TE1
Nisshinbo Micro Devices

NJL6401R-3-TE1

Sensors
Nisshinbo Micro Devices
NJL6401R-3-TE1
54-NJL6401R-3-TE1
Nisshinbo Micro Devices-NJL6401R-3-TE1-datasheet-789272.pdf
Nisshinbo Micro Devices-NJL6401R-3-TE1-datasheets-789272.pdf
SENSOR PHOTODIODE 800NM 2SMD
In Stock : 1581

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    Description Tech Specifications Documents Shopping Guide

    Tech Specifications

    Spectral Range
    -
    Diode Type
    PIN
    Response Time
    2ns
    Viewing Angle
    -
    Product
    PIN Photodiodes
    Fall Time
    2 ns
    Product Status
    Active
    RoHS
    RoHS Compliant
    Vr - Reverse Voltage
    35 V
    Package / Case
    2-SMD, No Lead
    Active Area
    0.49mm²
    Mfr
    Nisshinbo Micro Devices Inc.
    Voltage - DC Reverse (Vr) (Max)
    35 V
    Maximum Operating Temperature
    + 85 C
    Color - Enhanced
    Infrared(NIR)/Blue
    Peak Wavelength
    780 nm
    Mounting Style
    SMD/SMT
    Responsivity @ nm
    0.47 A/W @ 780nm, 0.42 A/W @ 650nm
    Operating Temperature
    -30°C ~ 85°C
    ECCN
    EAR99
    Mounting Type
    Surface Mount
    Wavelength
    800nm
    Minimum Operating Temperature
    - 30 C
    Series
    NJL6401
    Rise Time
    2 ns
    Moisture Sensitive
    Yes
    Current - Dark (Typ)
    100pA
    Half Intensity Angle Degrees
    -
    Package
    Tape & Reel (TR)
    USHTS
    8541497080
    Dark Current
    100 pA
    Base Product Number
    NJL6401

    NJL6401R-3-TE1 Documents

    Download datasheets and manufacturer documentation for NJL6401R-3-TE1

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