Marktech Optoelectronics
MTD8600N4-T
Sensors
MTD8600N4-T
54-MTD8600N4-T
Phototransistors Photo Diode 880nm
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Tech Specifications
Mounting Style
Through Hole
Maximum On-State Collector Current
50 mA
Collector-Emitter Breakdown Voltage
30 V
ECCN
EAR99
Fall Time
10 us
RoHS
RoHS Compliant
Wavelength
880 nm
Minimum Operating Temperature
- 30 C
Rise Time
10 us
Package / Case
TO-18-2
Length
4.65 mm
Half Intensity Angle Degrees
24 deg
Collector-Emitter Saturation Voltage
200 mV
Collector- Emitter Voltage VCEO Max
30 V
Height
6.2 mm
Maximum Operating Temperature
+ 100 C
Package
Bulk
Pd - Power Dissipation
250 mW
USHTS
8541491050
Width
4.65 mm
Dark Current
100 nA
Peak Wavelength
880 nm
MTD8600N4-T Documents
Download datasheets and manufacturer documentation for MTD8600N4-T
Shopping Guide
Payment Methods
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
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