Sharp
GP2S60B
Sensors
GP2S60B
54-GP2S60B
Photointerrupter Reflective Phototransistor 4-Pin SMT
In Stock : 7766
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Tech Specifications
Number of Channels per Chip
1
Unit Weight
0.003144 oz
Sensing Distance
0.5 mm
PPAP
No
Fall Time
20 us
RoHS
RoHS Compliant
Automotive
No
Supplier Package
SMT
Vr - Reverse Voltage
6 V
Package / Case
SMD-4
Number of Channels
1 Channel
EU RoHS
Compliant
Output Device
Phototransistor
Maximum Collector Current (mA)
20
Maximum Fall Time (ns)
100000
ECCN
EAR99
Standard Package Name
SMD
Wavelength
950 nm
Pin Count
4
Mounting
Surface Mount
Rise Time
20 us
Moisture Sensitive
Yes
Peak Wavelength (nm)
930
Collector- Emitter Voltage VCEO Max
35 V
Package
Reel
USHTS
8541498000
PCB changed
4
HTS
COMPONENTS
Output Type
Phototransistor
Maximum Collector-Emitter Voltage (V)
35
ECCN (US)
EAR99
Maximum Collector Current
20 mA
Sensing Method
Reflective
Maximum Power Dissipation (mW)
100
Minimum Operating Temperature (°C)
-25
Maximum Operating Temperature (°C)
85
Vf - Forward Voltage
1.2 V
Package Height
1.1
Maximum Reverse Voltage (V)
6
Height
1.1 mm
Maximum Operating Temperature
+ 85 C
If - Forward Current
20 mA
Maximum Forward Current (mA)
50
Width
1.7 mm
Mounting Style
SMD/SMT
Maximum Rise Time (ns)
100000
Package Length
3.2
Minimum Operating Temperature
- 25 C
Type
Reflective
Length
3.2 mm
Part Status
Active
Package Width
1.7
Pd - Power Dissipation
100 mW
GP2S60B Documents
Download datasheets and manufacturer documentation for GP2S60B
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