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onsemi_FODM214AV
onsemi_FODM214AV
onsemi

FODM214AV

Sensors
onsemi
FODM214AV
54-FODM214AV
onsemi-FODM214AV-datasheet-789532.pdf
onsemi-FODM214AV-datasheets-789532.pdf
Phototransistors 4SO TR VDE OPTION
In Stock : 3150

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Description Tech Specifications Documents Shopping Guide

Tech Specifications

Mounting Style
SMD/SMT
Maximum On-State Collector Current
50 mA
Collector-Emitter Breakdown Voltage
80 V
ECCN
EAR99
Product
Phototransistors
Fall Time
3 us
RoHS
RoHS Compliant
Minimum Operating Temperature
- 55 C
Series
FODM214
Type
Phototransistor Optocoupler
Rise Time
3 us
Package / Case
MFP-4
Collector-Emitter Saturation Voltage
400 mV
Collector- Emitter Voltage VCEO Max
80 V
Maximum Operating Temperature
+ 110 C
Package
Tube
Pd - Power Dissipation
150 mW
USHTS
8541498000
Dark Current
100 nA

FODM214AV Documents

Download datasheets and manufacturer documentation for FODM214AV

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Shopping Guide

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