Everlight Electronics
EAPSV3224A0
Sensors
EAPSV3224A0
54-EAPSV3224A0
LINEAR IC
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Tech Specifications
Number of Channels per Chip
1
PCB changed
2
HTS
8541.49.70.80
Viewing Angle
-
Maximum Collector-Emitter Voltage (V)
30
ECCN (US)
EAR99
PPAP
No
Maximum Power Dissipation (mW)
75
Current - Dark (Id) (Max)
100 nA
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
30 V
RoHS
RoHS Compliant
Automotive
No
Minimum Operating Temperature (°C)
-25
Maximum Operating Temperature (°C)
85
Supplier Package
Mini-SMD
Package / Case
1206 (3216 Metric)
Phototransistor Type
Phototransistor
Package Height
2.4
Mfr
Everlight Electronics Co Ltd
Maximum Collector-Emitter Saturation Voltage (V)
0.4
EU RoHS
Compliant
Maximum Dark Current (nA)
100
Operating Temperature
-25°C ~ 85°C
Maximum Rise Time (ns)
15000(Typ)
Current - Collector (Ic) (Max)
20 mA
Maximum Collector Current (mA)
20
Maximum Fall Time (ns)
15000(Typ)
ECCN
EAR99
Material
Silicon
Package Length
3.2
Orientation
Top View
Mounting Type
Surface Mount
Standard Package Name
SMD
Wavelength
940nm
Maximum Emitter-Collector Voltage (V)
5
Pin Count
2
Mounting
Surface Mount
Series
-
Type
Chip
Power - Max
75 mW
Part Status
Active
Peak Wavelength (nm)
940
HTSUS
8541.41.0000
Package
Tape & Reel (TR)
Lens Color
Black
Package Width
1.6
USHTS
8541497080
EAPSV3224A0 Documents
Download datasheets and manufacturer documentation for EAPSV3224A0
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Delivery Methods
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