Everlight Electronics
EAPST1608A0
Sensors
EAPST1608A0
54-EAPST1608A0
LINEAR IC
In Stock : 87
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Tech Specifications
Product
Phototransistors
PPAP
No
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
30 V
RoHS
RoHS Compliant
Automotive
No
Supplier Package
Mini-SMD
Package / Case
0603 (1608 Metric)
Maximum Collector-Emitter Saturation Voltage (V)
0.4
Lens Shape Type
Rectangular
EU RoHS
Compliant
Operating Temperature
-25°C ~ 85°C
Collector-Emitter Breakdown Voltage
30 V
Current - Collector (Ic) (Max)
20 mA
Maximum Collector Current (mA)
20
ECCN
EAR99
Orientation
Top View
Mounting Type
Surface Mount
Standard Package Name
SMD
Wavelength
940nm
Maximum Emitter-Collector Voltage (V)
5
Pin Count
2
Mounting
Surface Mount
Moisture Sensitive
Yes
Viewing Orientation
Top View
Peak Wavelength (nm)
940
Collector- Emitter Voltage VCEO Max
30 V
HTSUS
8541.41.0000
Package
Bulk
Lens Color
Clear
USHTS
8541497080
Maximum On-State Collector Current
900 uA
PCB changed
2
HTS
8541.41.00.00
Viewing Angle
-
Maximum Collector-Emitter Voltage (V)
30
ECCN (US)
EAR99
Maximum Power Dissipation (mW)
75
Current - Dark (Id) (Max)
100 nA
Minimum Operating Temperature (°C)
-25
Maximum Operating Temperature (°C)
85
Phototransistor Type
Phototransistor
Collector-Emitter Saturation Voltage
400 mV
Mfr
Everlight Electronics Co Ltd
Polarity
NPN
Maximum Operating Temperature
+ 85 C
Maximum Dark Current (nA)
100
Mounting Style
SMD/SMT
Package Length
1.6
Minimum Operating Temperature
- 25 C
Series
-
Type
Chip
Power - Max
75 mW
Part Status
Active
Package Width
0.8
Pd - Power Dissipation
75 mW
Dark Current
100 nA
EAPST1608A0 Documents
Download datasheets and manufacturer documentation for EAPST1608A0
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