Vishay
BPV11F
Sensors
BPV11F
54-BPV11F
Phototransistor IR Chip Silicon 930nm 2-Pin T-1 3/4
In Stock : 6210
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Tech Specifications
Number of Channels per Chip
1
Unit Weight
0.014110 oz
Fabrication Technology
NPN Transistor
Light Current
9 mA
Product
Phototransistors
PPAP
No
RoHS
RoHS Compliant
Automotive
No
Supplier Package
T-1 3/4
Package / Case
T-1 3/4
Maximum Collector-Emitter Saturation Voltage (V)
0.3
Lens Shape Type
Domed
EU RoHS
Compliant
Peak Wavelength
930 nm
Collector-Emitter Breakdown Voltage
70 V
Maximum Collector Current (mA)
50
ECCN
EAR99
Wavelength
930 nm
Pin Count
2
Mounting
Through Hole
Lens Color/Style
Water Clear
Viewing Orientation
Top View
Lead Shape
Through Hole
Peak Wavelength (nm)
930
Collector- Emitter Voltage VCEO Max
70 V
Package
Tube
USHTS
8541497080
Maximum Light Current (uA)
9000(Typ)
Maximum On-State Collector Current
50 mA
PCB changed
2
HTS
8541.49.80.00
Maximum Collector-Emitter Voltage (V)
70
ECCN (US)
EAR99
Maximum Power Dissipation (mW)
150
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
100
Phototransistor Type
Phototransistor
Package Height
8.6
Collector-Emitter Saturation Voltage
130 mV
Polarity
NPN
Height
8.6 mm
Maximum Operating Temperature
+ 100 C
Maximum Dark Current (nA)
50
Width
5.75 mm
Diameter
5.75
Mounting Style
Through Hole
Material
Silicon
Minimum Operating Temperature
- 40 C
Cut-Off Filter
Visible Cut-off
Type
IR Chip
Half Intensity Angle Degrees (°)
30
Length
5.75 mm
Half Intensity Angle Degrees
15 deg
Part Status
Active
Pd - Power Dissipation
150 mW
Dark Current
50 nA
BPV11F Documents
Download datasheets and manufacturer documentation for BPV11F
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Shopping Guide
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Shipping Rate
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Delivery Methods
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