Vishay
BPV11
Sensors
BPV11
54-BPV11
Phototransistor Chip Silicon 850nm 2-Pin T-1 3/4
In Stock : 6242
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BPV11 Description
Phototransistor Chip Silicon 850nm 2-Pin T-1 3/4
Tech Specifications
Number of Channels per Chip
1
Fabrication Technology
NPN Transistor
Light Current
10 mA
Product
Phototransistors
PPAP
No
RoHS
RoHS Compliant
Automotive
No
Supplier Package
T-1 3/4
Package / Case
T-1 3/4
Maximum Collector-Emitter Saturation Voltage (V)
0.3
Lens Shape Type
Domed
EU RoHS
Compliant
Peak Wavelength
850 nm
Collector-Emitter Breakdown Voltage
70 V
Maximum Collector Current (mA)
50
ECCN
EAR99
Wavelength
850 nm
Pin Count
2
Mounting
Through Hole
Lens Color/Style
Water Clear
Viewing Orientation
Top View
Lead Shape
Through Hole
Peak Wavelength (nm)
850
Collector- Emitter Voltage VCEO Max
70 V
Package
Bulk
Lens Color
Water Clear
USHTS
8541498000
Maximum Light Current (uA)
10000(Typ)
Maximum On-State Collector Current
50 mA
PCB changed
2
HTS
8541.40.70.80
Maximum Collector-Emitter Voltage (V)
70
ECCN (US)
EAR99
Maximum Power Dissipation (mW)
150
Maximum Operating Temperature (°C)
100
Phototransistor Type
Phototransistor
Package Height
8
Collector-Emitter Saturation Voltage
130 mV
Polarity
NPN
Height
8 mm
Maximum Operating Temperature
+ 100 C
Maximum Dark Current (nA)
50
Width
5.75 mm
Diameter
5.75
Mounting Style
Through Hole
Material
Silicon
Minimum Operating Temperature
- 40 C
Type
Chip
Half Intensity Angle Degrees (°)
30
Length
5.75 mm
Half Intensity Angle Degrees
15 deg
Part Status
Active
Pd - Power Dissipation
150 mW
Dark Current
50 nA
BPV11 Documents
Download datasheets and manufacturer documentation for BPV11
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Shopping Guide
Payment Methods
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Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
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